Origins of lasing emission in a resonance-controlled ZnO random laser

نویسندگان

  • Toshihiro Nakamura
  • Hideki Fujiwara
  • Ryo Niyuki
  • Keiji Sasaki
  • Yoshie Ishikawa
  • Naoto Koshizaki
  • Takeshi Tsuji
  • Sadao Adachi
چکیده

We investigate the origins of lasing emission in a scatterer-resonance-controlled random laser made of ZnO nanopowder over a wide temperature range (20–300K). At higher temperatures ( 150 > K), the lasing emission appears around exciton recombination energies and the lasing threshold carrier density is comparable to the Mott density, indicating that the resonance-controlled random laser is going toward showing excitonic lasing; at lower temperatures, random lasing is caused by usual electron–hole plasma recombination because of the threshold carrier density being much larger than the Mott density.

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تاریخ انتشار 2014